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Impact of Strain Effects on Hole Mobility and Effective Mass in the p-Channel Nanowire Cross-Section
Impact of Strain Effects on Hole Mobility and Effective Mass in the p-Channel Nanowire Cross-Section
Challenge 애게서 업로드 하였습니다. 17. 8. 10 오후 3:56 경진대회: 나노물리 나노물리 » 6회 경진대회
버전 1.2
This study investigated the effect of strain on hole mobility and hole effective mass in a p-channel rectangular nanowire with two-dimensional confinement. We obtained the valence energy band structure using the six-band k.p method and calculated the mobility and effective mass of the hole in the [100] direction taking the strain effect into account in the inversion region. The hole mobility of strained silicon was calculated using Kubo-Greenwood formalism. As a result, it showed good performance compared to relaxed silicon, but its magnitude was insignificant.
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